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2DB1714-13

Manufacturer:

Diodes Incorporated

Mfr.Part #:

2DB1714-13

Datasheet:
Description:

BJTs SOT-89-3 SMD/SMT PNP 2 W Collector Base Voltage (VCBO):30 V Collector Emitter Voltage (VCEO):30 V Emitter Base Voltage (VEBO):6 V

ParameterValue
Length4.5 mm
Width2.5 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins4
Height1.4 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
PolarityPNP
REACH SVHCNo SVHC
Frequency200 MHz
Number of Elements1
Max Power Dissipation900 mW
Power Dissipation2 W
Max Collector Current2 A
Collector Emitter Breakdown Voltage30 V
Transition Frequency200 MHz
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)30 V
Max Breakdown Voltage30 V
Gain Bandwidth Product200 MHz
Collector Base Voltage (VCBO)30 V
Collector Emitter Saturation Voltage-370 mV
Emitter Base Voltage (VEBO)6 V
Schedule B8541290080
Max Cutoff Collector Current100 nA
Transistor TypePNP

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